2SK1645 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – For C to X-band Local Oscillator and Amplifier

2SK1645
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Gate-to-Source Breakdown Voltage
Saturated Drain Current
Gate-to-Source Cutoff Voltage
Forward Transfer Admittance
Minimum Noise Figure
Associated Gain
Maximum Available Gain
V(BR)GSO
IDSS
VGS(off)
^yfs
NFmin
Ga
MAG
IGS=--10µA
VDS=3V, VGS=0
VDS=3V, ID=100µA
VDS=3V, ID=10mA
VDS=3V, ID=10mA, f=12GHz
VDS=3V, ID=10mA, f=12GHz
VDS=3V, ID=10mA, f=12GHz
* : The 2SK1645 is classified by IDSS as follows : unit : mA
IDSS RANK RANGE (mA)
03
30 to 65
04
55 to 100
Ratings
Unit
min
typ
max
--5.0
V
30
60
100 mA
--0.5
--1.5
--5.0
V
40
mS
2.5
dB
5.5
dB
7.0
dB
S-Parameter
S11 VDS=3V, ID=10mA, 20mA
50
25
10
9GHz
<9GHz>
0
10
25
50 100
<6GHz>
6GHz
--10
--25
ID=20mA
ID=10mA
--50
100
150
200
250
150 250
--250
--200
--150
--100
1.0unit, max
IT03196
S12 VDS=3V, ID=10mA, 20mA
120˚
90˚
60˚
150˚
±180˚
--150˚
--120˚
30˚
<3GHz>
3GHz
<6GH6zG9>HGzHz
<9GHz> ⁰
12GHz <12GHz>
--30˚
--90˚
--60˚
15GHz
<15GHz>
0.25unit, max
IT03197
S21 VDS=3V, ID=10mA, 20mA
150˚
90˚
120˚
ID=20mA
ID=10mA
60˚
30˚
±180˚
6GHz ^<6GHz>
15GHz12GHz9GHz
<9GHz>
0
--150˚
--30˚
--120˚
--90˚
--60˚
5.0unit, max
IT03198
S22 VDS=3V, ID=10mA, 20mA
50
25
100
12GHz
10
<12GHz>
150
200
250
0
10 _9GHz
25
<9GHz> 100
<^560GHz>
150 250
--10
6GHz
ID=20mA
--250
--200
ID=10mA
--150
--25
--50
--100
1.0unit, max
IT03199
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