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2SK1444LS Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications
2SK1444LS
Continued from preceding page.
Parameter
Symbol
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
VGS(off)
yfs
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Conditions
VDS=10V, ID=1mA
VDS=10V, ID=0.5A
ID=0.5A, VGS=10V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
IS=3A, VGS=0
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=1µs
D.C.≤0.5%
VDD=
200V
ID=1.5A
RL=133Ω
D
VOUT
G
S
P.G
RGS
50Ω
2SK1444LS
Ratings
Unit
min
typ
max
2.0
3.0
V
1.1
2.2
S
2.0
2.6
Ω
400
pF
60
pF
25
pF
12
ns
20
ns
80
ns
35
ns
1.8
V
ID -- VDS
6
5
V GS=10.0V 6.0V
5.5V
4
5.0V
3
2
4.5V
1
4.0V
0
0
4
8
12
16
20
24
Drain-to-Source Voltage, VDS -- V ITR01394
ID -- Tc
7
VDS=10V
6
5
4
3
2
1
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
ITR01396
ID -- VGS
6
Tc= --25°C
VDS=10V
5
25°C
4
75°C
3
2
1
0
0
2
4
6
8
10
12
14
Gate-to-Source Voltage, VGS -- V ITR01395
VGS(off) -- Tc
5
VDS=10V
ID=1mA
4
3
2
1
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
ITR01397
No.3447-2/4