2SJ662 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
7513-002
10.2
2SJ662
Symbol
Conditions
min
Ciss
Coss
Crss
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
td(on)
tr
See specified Test Circuit.
See specified Test Circuit.
td(off)
tf
Qg
Qgs
Qgd
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--50A
VDS=--30V, VGS=--10V, ID=--50A
VDS=--30V, VGS=--10V, ID=--50A
VSD
IS=--50A, VGS=0V
4.5
1.3
Package Dimensions
unit : mm
7001-003
10.2
Ratings
Unit
typ
max
6500
pF
700
pF
500
pF
53
ns
330
ns
480
ns
270
ns
120
nC
22
nC
22
nC
--1.03
--1.2
V
4.5
1.3
1.2
0.8
0.4
123
2.55
2.55
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.≤1%
G
VDD= --30V
ID= --25A
RL=1.2Ω
D
VOUT
2SJ662
P.G
50Ω
S
12 3
0.8
1.2
2.55
2.55
2.55
2.55
0 to 0.3
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
Avalanche Resistance Test Circuit
0V
--10V
≥50Ω
RG
50Ω
L
DUT
VDD
No.8587-2/4