2SJ661_12 Datasheet, PDF (2/9 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

2SJ661
Continued from preceding page.
Parameter
Channel Temperature
Symbol
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--30V, L=200μH, IAV=--38A (Fig.1)
*2 L≤200μH, single pulse
Conditions
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--19A
ID=--19A, VGS=--10V
ID=--19A, VGS=--4V
VDS=--20V, f=1MHz
See Fig.2
VDS=--30V, VGS=--10V, ID=--38A
IS=--38A, VGS=0V
Ratings
Unit
150
°C
--55 to +150
°C
250 mJ
--38
A
Ratings
Unit
min
typ
max
--60
V
--1
μA
±10
μA
--1.2
--2.6
V
18
31
S
29.5
39 mΩ
40
56 mΩ
4360
pF
470
pF
335
pF
33
ns
285
ns
295
ns
195
ns
80
nC
15
nC
12
nC
--1.0
--1.2
V
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
0V
--10V
≥50Ω
RG
50Ω
L
2SJ661
VDD
VIN
0V
--10V
VIN
PW=10μs
D.C.≤1%
G
VDD= --30V
ID= --19A
RL=1.58Ω
D
VOUT
2SJ661
P.G
50Ω
S
Ordering Information
Device
2SJ661-1E
2SJ661-DL-1E
Package
TO-262-3L
TO-263-2L
Shipping
50pcs./magazine
800pcs./reel
memo
Pb Free
No.8586-2/9