2SJ651 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – P CHANNEL SILICON TRASISTOR

Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain“Miller”Charge
Diode Forward Voltage
Package Dimensions
unit : mm
7508-003
10.0
3.2
2SJ651
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--20A
VDS=--30V, VGS=--10V, ID=--20A
VDS=--30V, VGS=--10V, ID=--20A
IS=--20A, VGS=0V
4.5
2.8
Ratings
Unit
min
typ
max
2200
pF
220
pF
165
pF
18
ns
115
ns
190
ns
120
ns
45
nC
7.4
nC
9
nC
--0.95
--1.2
V
1.6
1.2
0.75
123
2.55
2.55
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.≤1%
G
VDD= --30V
ID= --10A
RL=3Ω
D
VOUT
2SJ651
P.G
50Ω
S
Avalanche Resistance Test Circuit
0V
--10V
≥50Ω
RG
50Ω
L
2SJ651
VDD
No.7501-2/5