2SJ635 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
7518-004
2SJ635
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--12A
VDS=--30V, VGS=--10V, ID=--12A
VDS=--30V, VGS=--10V, ID=--12A
IS=--12A, VGS=0V
Package Dimensions
unit : mm
7003-004
6.5
2.3
6.5
5.0
0.5
5.0
4
4
Ratings
Unit
min
typ
max
18
ns
80
ns
200
ns
125
ns
45
nC
10
nC
7
nC
--0.9
--1.2
V
2.3
0.5
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
Switching Time Test Circuit
VIN
0V
--10V
PW=10µs
D.C.≤1%
VIN
G
VDD= --30V
ID= --6A
RL=5Ω
D
VOUT
P.G
50Ω
2SJ635
S
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
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