2SJ501 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

2SJ501
Continued from preceding page.
Parameter
Symbol
Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Switching Time Test Circuit
VIN
0V
–4V
VIN
PW=10µs
D.C.≤1%
VDD=–10V
ID=–300mA
RL=33Ω
D
VOUT
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=–10V, VGS=–10V, ID=–500mA
VDS=–10V, VGS=–10V, ID=–500mA
VDS=–10V, VGS=–10V, ID=–500mA
IS=–500mA, VGS=0
G
P.G
50Ω
2SJ501
S
Ratings
Unit
min typ max
100
pF
60
pF
25
pF
10
ns
17
ns
30
ns
35
ns
5
nC
1
nC
1
nC
–0.87 –1.5 V
ID - VDS
-0.6
-0.5
-2.0V
-0.4
-0.3
-8.0V
-0.2
-6.0V
-4.0V
-3.0V
--
VGS=-1.5V
0
0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
Drain-to-Source Voltage, VDS – V
| ^yfs | - I D
10
7
VDS=-10V
5
3
2
Ta=-25^°C ₂₅^°C
1.0
75^°C
7
5
3
2
0.1
-0.01
23
5 7 _-0.1
2 3 5 7 _-1.0
Drain Current, ID – A
23
-2.0
VDS=-10V
-1.8
ID - VGS
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
1000
900
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
Gate-to-Source Voltage, VGS – V
RDS(on) - VGS
Ta=25°C
800
ID=-0.3A
700
ID=-0.05A
600
500
400
300
200
100
0
0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
Gate-to-Source Voltage, VGS – V
No.5948–2/4