2SD1835-D Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – Driver Applications

2SB1229/2SD1835
Continued from preceding page.
Parameter
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON TIme
Storage Time
Symbol
Conditions
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
IC=(–)1A, IB=(–)50mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
See specified Test Circuit
tstg
See specified Test Circuit
Fall Time
tf
See specified Test Circuit
* : The 2SB1229/2SD1835 are classified by 100mA h_FE as follows :
Rank
R
S
T
hFE
100 to 200 140 to 280 200 to 400
U
280 to 560
Switching Time Test Circuit
IB1
IB2
OUTPUT
INPUT
VR
RB
RL
50Ω
+
+
100µF
470µF
VBE= --5V
VCC
IC=10IB1= --10IB2=500mA, VCC=25V
(For PNP, the polarity is reversed.)
Ratings
Unit
min
typ
max
(–)0.9 (–)1.2 V
(–)60
V
(–)50
V
(–)6
V
60(60)
ns
550
ns
(450)
ns
30
ns
30
ns
--2.4
--2.0
--1.6
--1.2
--0.8
--0.4
0
0
--1200
--1000
--800
--600
--400
--200
0
0
IC -- VCE
--50mA
--20mA
--10mA
--8mA
--6mA
--4mA
--2mA
2SB1229
IB=0
--0.4
--0.8
--1.2
--1.6
--2.0
--2.4
Collector-to-Emitter Voltage, VCE – V _ITR09360
IC -- VCE
--7mA
2SB1229
--6mA
--5mA
--4mA
--3mA
--2mA
--1mA
IB=0
--2
--4
--6
--8
--10
--12
Collector-to-Emitter Voltage, VCE – V _ITR09362
2.4
2.0
1.6
1.2
0.8
0.4
0
0
1200
1000
800
600
400
200
0
0
IC -- VCE
50mA
40mA
25mA
15mA
8mA
4mA
2mA
2SD1835
IB=0
0.4
0.8
1.2
1.6
2.0
2.4
Collector-to-Emitter Voltage, VCE – V _ITR09361
IC -- VCE
7mA
6mA
2SD1835
5mA
4mA
3mA
2mA
1mA
IB=0
2
4
6
8
10
12
Collector-to-Emitter Voltage, VCE – V _ITR09363
No.2158–2/5