2SC6146 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

2SC6146
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCE=10V, IC=0.1A
VCB=10V, f=1MHz
IC=0.5A, IB=0.1A
IC=0.5A, IB=0.1A
IC=1mA, IE=0A
IC=100μA, RBE=0Ω
IC=5mA, RBE=∞
IE=1mA, IC=0A
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
Ratings
min
typ
20
10
800
800
350
8
max
0.8
1.5
1.0
1.0
0.3
Unit
MHz
pF
V
V
V
V
V
V
μs
μs
μs
Package Dimensions
unit : mm (typ)
7519-003
6.9
2.5
1.45
1.0
0.6
0.5
1
2
3
0.45
0.9
1 : Emitter
2 : Collector
2.54
2.54 3 : Base
SANYO : NMP
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
IB2
INPUT
VR
RB
50Ω
+
100μF
VBE= --5V
OUTPUT
RL
+
470μF
VCC=200V
IC -- VCE
1.0
200mA
150mA
0.8
50mA ^{60mA 70mA 80mA 90mA 100mA}
0.6
40mA
30mA
20mA
0.4
10mA
0.2
0
IB=0mA
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Collector-to-Emitter Voltage, VCE -- V IT13485
1.0
VCE=5V
0.9
IC -- VBE
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE -- V IT13486
No. A1160-2/4