2SC6144SG Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – High-Current Switching Applications

2SC6144SG
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=40V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=270mA
VCE=10V, IC=3A
VCB=10V, f=1MHz
IC=6A, IB=300mA
IC=6A, IB=300mA
IC=100μA, IE=0A
IC=1mA, RBE=∞
IE=100μA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min
typ
200
330
60
180
60
50
5
62
350
25
max
10
10
560
360
1.2
Unit
μA
μA
MHz
pF
mV
V
V
V
V
ns
ns
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
IB2
OUTPUT
INPUT
VR
RB
RL
50Ω
+
+
100μF
470μF
VBE= --5V
VCC=20V
IC=20IB1= --20IB2=5A
IC -- VCE
10
9
60mA
40mA
35mA _30mA
8
25mA
7
45mA
20mA
6
50mA
15mA
5
4
10mA
3
2
5mA
1
0
IB=0mA
0
1
2
3
4
5
Collector-to-Emitter Voltage, VCE -- V IT13454
IC -- VBE
25
VCE=2V
20
15
10
5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
7
5
3
2
100
7
5
IC -- VCE
181m6AmA
14mA
20mA
30mA
12mA
10mA
8mA
6mA
4mA
2mA
IB=0mA
0.5
1.0
1.5
2.0
Collector-to-Emitter Voltage, VCE -- V IT13455
hFE -- IC
VCE=2V
Ta=75°C
25°C
--25°C
0
0
0.5
1.0
1.5
Base-to-Emitter Voltage, VBE -- V IT13456
3
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10
Collector Current, IC -- A
23 5
IT13457
No. A1800-2/4