2SC6113 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Triple Diffused Planar Silicon Transistor For 14, 21 inch TV Power Supply

2SC6113
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEX(sus)
ton
tstg
tf
VCB=500V, IE=0A
VEB=5V, IC=0A
VCE=5V, IC=1.2A
VCE=5V, IC=6A
VCE=10V, IC=1.2A
VCB=10V, f=1MHz
IC=6A, IB=1.2A
IC=6A, IB=1.2A
IC=1mA, IE=0A
IC=5mA, RBE=∞
IE=1mA, IC=0A
IC=2.5A, IB1=--IB2=2A, L=1mH, clamped
VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=50Ω
VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=50Ω
VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=50Ω
Ratings
min
typ
40
8
18
80
1000
500
7
500
max
10
10
80
1.0
1.5
0.5
3.0
0.3
Unit
μA
μA
MHz
pF
V
V
V
V
V
V
μs
μs
μs
Package Dimensions
unit : mm (typ)
7504-001
16.0
3.4 _5.6
3.1
2.8
2.0
0.7
123
5.45
5.45
2.1
0.9
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
IB2
INPUT
VR
RB
50Ω
+
100μF
VBE= --5V
OUTPUT
RL
+
470μF
VCC=200V
IC -- VCE
10
1000mA
9
800mA
8
500mA ^600mA
7
400mA
6
300mA
5
200mA
4
100mA
3
2
1
0
IB=0mA
0
1
2
3
4
5
6
7
8
9 10
Collector-to-Emitter Voltage, VCE -- V IT13465
IC -- VBE
14
VCE=5V
12
10
8
6
4
2
0
0
0.5
1.0
1.5
2.0
Base-to-Emitter Voltage, VBE -- V IT13466
No. A1155-2/4