2SC6112 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

2SC6112
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEX(sus)
ton
tstg
tf
IC=6A, IB=1.2A
IC=6A, IB=1.2A
IC=1mA, IE=0A
IC=5mA, RBE=∞
IE=1mA, IC=0A
IC=2.5A, IB1=--IB2=2A, L=1mH, clamped
VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=50Ω
VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=50Ω
VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=50Ω
Ratings
min
typ
1000
500
7
500
Unit
max
1.0
V
1.5
V
V
V
V
V
0.5 μs
3.0 μs
0.3 μs
Package Dimensions
unit : mm (typ)
7507-001
10.2
5.1 3.6
4.5
1.3
1.2
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
IB2
INPUT
VR
RB
50Ω
+
100μF
VBE= --5V
OUTPUT
RL
+
470μF
VCC=200V
0.8
123
2.55
2.55
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220
IC -- VCE
10
1000mA
9
800mA
8
500mA ^600mA
7
400mA
6
300mA
5
200mA
4
100mA
3
2
1
0
IB=0mA
0
1
2
3
4
5
6
7
8
9 10
Collector-to-Emitter Voltage, VCE -- V IT13465
IC -- VBE
14
VCE=5V
12
10
8
6
4
2
0
0
0.5
1.0
1.5
2.0
Base-to-Emitter Voltage, VBE -- V IT13466
No. A1154-2/4