2SC6096 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Package Dimensions
unit : mm
7007A-004
Top View
4.5
1.6
1
2
3
0.4
0.5
1.5
3.0
2SC6096
Symbol
Conditions
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCE=10V, IC=300mA
VCB=10V, f=1MHz
IC=1A, IB=100mA
IC=1A, IB=100mA
IC=10µA, IE=0A
IC=100µA, RBE=0Ω
IC=1mA, RBE=∞
IE=10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
120
120
100
6.5
Ratings
typ
300
13
100
0.85
40
1100
40
max
150
1.2
Unit
MHz
pF
mV
V
V
V
V
V
ns
ns
ns
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
OUTPUT
1.5
INPUT VR10
RB
RL
50Ω
+
+
100µF
470µF
VBE= --5V
VCC=50V
0.4
10IB1= --10IB2=IC=0.5A
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
IC -- VCE
2.0
1.8
80mA
60mA
1.6
40mA
1.4
1.2
20mA
1.0
10mA
0.8
5mA
0.6
2mA
0.4
0.2
0
IB=0mA
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V IT11115
IC -- VBE
2.0
VCE=5V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE -- V IT11116
No. A0434-2/4