2SC6083 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Package Dimensions
unit : mm (typ)
7524-004
4.0
2.2
0.4
0.5
0.4
0.4
2SC6083
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=0.5A, IB=0.1A
IC=0.5A, IB=0.1A
IC=1mA, IE=0A
IC=5mA, RBE=∞
IE=1mA, IC=0A
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V
Ratings
min
typ
700
350
8
Switching Time Test Circuit
Unit
max
0.8
V
1.5
V
V
V
V
1.0 µs
2.5 µs
0.3 µs
IB1
PW=20µs
D.C.≤1%
IB2
INPUT
VR
RB
50Ω
+
100µF
VBE= --5V
OUTPUT
RL
+
470µF
VCC=200V
123
1.3
1.3
3.0
3.8
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
1.0
0.9
200mA
0.8
IC -- VCE
150mA
100mA
0.7
0.6
0.5
30mA
20mA
0.4
0.3
60mA ^{50mA 40mA}
10mA
0.2
70mA
80mA
0.1
90mA
0
0
2
4
6
IB=0mA
8
10
Collector-to-Emitter Voltage, VCE -- V IT12786
IC -- VBE
1.0
VCE=5V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Base-to-Emitter Voltage, VBE -- V IT12787
No. A0899-2/4