2SC6082 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – 50V / 15A High-Speed Switching Applications

2SC6082
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCE=10V, IC=2A
VCB=10V, f=1MHz
IC=7.5A, IB=375mA
IC=7.5A, IB=375mA
IC=100µA, IE=0A
IC=100µA, RBE=0Ω
IC=1mA, RBE=∞
IE=100µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min
typ
195
85
200
60
60
50
6
52
560
37
max
400
1.2
Unit
MHz
pF
mV
V
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
7508-002
10.0
3.2
4.5
2.8
1.6
1.2
0.75
0.7
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
INPUT
VR
RB
50Ω
+
100µF
VBE= --5V
IC=20IB1= --20IB2=5A
OUTPUT
RL
+
470µF
VCC=25V
123
2.55
2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
15
From a top
14 _300mA
13 250mA
12
200mA
180mA
11 _150mA
10 120mA
9 ^100mA
IC -- VCE
50mA
40mA
30mA
8
20mA
7
6
5
90mA ^{80mA 70mA 60mA}
10mA
4
3
2
1
0
IB=0mA
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Collector-to-Emitter Voltage, VCE -- V IT10574
IC -- VCE
10
9
50mA _40mA
8
30mA
7
20mA
6
15mA
5
10mA
4
3
5mA
2
1
0
IB=0mA
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V IT10575
No. A0279-2/4