2SC6043 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications

Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
2SC6043
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=1A, IB=50mA
IC=1A, IB=50mA
IC=10µA, IE=0A
IC=100µA, RBE=0Ω
IC=1mA, RBE=∞
IE=10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
Unit
min
typ
max
150
300 mV
0.94
1.2
V
80
V
80
V
50
V
6
V
35
ns
330
ns
40
ns
Package Dimensions
unit : mm
7520-002
6.0
4.7
5.0
0.5
0.6
0.5
0.5
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
INPUT
VR
50Ω
RB
+
100µF
VBE= --5V
IC=10IB1= --10IB2=700mA
OUTPUT
RL
+
470µF
VCC=25V
123
1.45
1.45
1 : Emitter
2 : Collector
3 : Base
SANYO : MP
IC -- VCE
2.0
1.8
30mA
25mA
20mA
1.6
15mA
1.4
10mA
1.2
1.0
5mA
0.8
3mA
0.6
2mA
0.4
1mA
0.2
0
IB=0mA
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Collector-to-Emitter Voltage, VCE -- V IT09719
2.0
VCE=2V
1.8
IC -- VBE
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE -- V IT09720
No.8326-2/4