2SC6022 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

2SC6022
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=10V, f=1MHz
IC=2.5A, IB=50mA
IC=4A, IB=200mA
IC=2.5A, IB=50mA
IC=10µA, IE=0A
IC=1mA, RBE=∞
IE=10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Package Dimensions
unit : mm
7518-003
6.5
5.0
4
2.3
0.5
Package Dimensions
unit : mm
7003-003
6.5
5.0
4
Ratings
Unit
min
typ
max
40
pF
100
150 mV
120
180 mV
0.85
1.2
V
40
V
30
V
6
V
30
ns
320
ns
15
ns
2.3
0.5
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
OUTPUT
INPUT
VR
50Ω
RB
+
100µF
VBE= --5V
IC=20IB1= --20IB2=2.5A
RL
+
470µF
VCC=12V
IC -- VCE
9
8
100mA _80mA
60mA
7
50mA
6
40mA
30mA
5
20mA
4
10mA
3
5mA
2
1
0
IB=0mA
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V IT09466
10
VCE=2V
9
IC -- VBE
8
7
6
5
4
3
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base-to-Emitter Voltage, VBE -- V IT09467
No.8355-2/4