2SC6019 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

2SC6019
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=10V, f=1MHz
IC=1.5A, IB=30mA
IC=3A, IB=60mA
IC=3A, IB=60mA
IC=10µA, IE=0A
IC=1mA, RBE=∞
IE=10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Package Dimensions
unit : mm
7518-003
6.5
5.0
4
2.3
0.5
Package Dimensions
unit : mm
7003-003
6.5
5.0
4
Ratings
Unit
min
typ
max
23
pF
85
125 mV
145
215 mV
0.85
1.2
V
15
V
15
V
6
V
30
ns
190
ns
15
ns
2.3
0.5
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Switching Time Test Circuit
PW=20µs
IB1
D.C.≤1%
INPUT
IB2
VR _RB
50Ω
+
100µF
+
470µF
OUTPUT
RL
VBE= --5V
VCC=5V
IC=20IB1= --20IB2=3A
7
IC -- VCE
60mA ^50mA
6
5
40mA
30mA
20mA
4
10mA
3
5mA
2
1
0
IB=0mA
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V IT09436
8
IC -- VBE
VCE=2V
7
6
5
4
3
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Base-to-Emitter Voltage, VBE -- V IT09437
No.8342-2/4