2SC6015 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Package Dimensions
unit : mm
7008-003
Top View
4.5
1.6
1
2
3
0.4
0.5
1.5
3.0
2SC6015
Symbol
Conditions
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCE=2V, IC=500mA
VCB=10V, f=1MHz
IC=3A, IB=60mA
IC=4.5A, IB=90mA
IC=3A, IB=60mA
IC=10µA, IE=0A
IC=1mA, RBE=∞
IE=10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
15
15
6
Ratings
typ
280
50
90
135
0.85
30
180
25
max
135
205
1.2
Unit
MHz
pF
mV
mV
V
V
V
V
ns
ns
ns
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
OUTPUT
1.5
INPUT
VR
RB
RL
50Ω
+
+
100µF
470µF
VBE= --5V
VCC=5V
0.4
IC=20IB1= --20IB2=3A
Bottom View
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
IC -- VCE
9
8
50mA
40mA
30mA
7
6
20mA
5
15mA
4
10mA
3
2
5mA
1
0
IB=0mA
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V IT09760
5
VCE=2V
4
IC -- VBE
3
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Base-to-Emitter Voltage, VBE -- V IT09761
No.8558-2/4