2SC5999 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications

2SC5999
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=10V, f=1MHz
IC=10A, IB=500mA
IC=10A, IB=500mA
IC=100µA, IE=0
IC=100µA, RBE=0
IC=1mA, RBE=∞
IE=100µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
120
120
50
6
Ratings
typ
170
150
0.93
230
1300
40
Unit
max
pF
300 mV
1.4
V
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm
2069C
10.2
4.5 _1.3
1 23
0.8
1.2
2.55
2.55
2.55
2.55
0 to 0.3
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : SMP-FD
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
INPUT
VR
RB
50Ω
+
100µF
VBE= --5V
IC=20IB1= --20IB2=4A
OUTPUT
RL
+
470µF
VCC=20V
IC -- VCE
16
14
50mA ^45mA
40mA
35mA
30mA
12
25mA
10
20mA
8
15mA
6
10mA
4
5mA
2
0
IB=0
0
2
4
6
8
10
Collector-to-Emitter Voltage, VCE -- V IT07555
IC -- VCE
25
250mA ^200mA
150mA
100mA
20
15
50mA
10
5
0
IB=0
0
1
2
3
4
5
Collector-to-Emitter Voltage, VCE -- V IT07556
No.8029-2/4