2SC5991 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – DC / DC Converter Applications

Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Package Dimensions
unit : mm
2163A
4.5
1.6
1
2
3
0.4
0.5
1.5
3.0
2SC5991
Symbol
Conditions
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCE=10V, IC=500mA
VCB=10V, f=1MHz
IC=3.5A, IB=175mA
IC=2A, IB=40mA
IC=2A, IB=40mA
IC=10µA, IE=0
IC=100µA, RBE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
100
100
50
6
Ratings
typ
330
28
105
90
0.81
30
420
25
max
160
135
1.2
Unit
MHz
pF
mV
mV
V
V
V
V
V
ns
ns
ns
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
OUTPUT
1.5
INPUT
VR
RB
RL
50Ω
+
+
100µF
470µF
VBE= --5V
VCC=25V
0.4
IC=20IB1= --20IB2=2.5A
0.75
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
type B
IC -- VCE
7
6
100mA
80mA
60mA
50mA
5
40mA
30mA
4
20mA
3
15mA
10mA
2
5mA
1
0
IB=0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V IT08237
7
VCE=2V
6
IC -- VBE
5
4
3
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base-to-Emitter Voltage, VBE -- V IT08238
No.8071-2/4