2SC5990 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

2SC5990
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=10V, f=1MHz
IC=1A, IB=50mA
IC=2A, IB=100mA
IC=2A, IB=100mA
IC=10µA, IE=0A
IC=100µA, RBE=0Ω
IC=1mA, RBE=∞
IE=10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
Unit
min
typ
max
15
pF
65
100 mV
110
165 mV
0.88
1.3
V
100
V
100
V
50
V
-6
V
35
ns
300
ns
20
ns
Package Dimensions
unit : mm
7007-004
Top View
4.5
1.6
1.5
1
2
3
0.4
0.4
0.5
1.5
3.0
Switching Time Test Circuit
PW=20µs ^IB1
D.C.≤1%
IB2
INPUT
VR10 _RB
50Ω
+
100µF
OUTPUT
+
470µF
RL=25Ω
VBE= --5V
VCC=25V
10IB1= --10IB2= IC=1A
Bottom View
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
IC -- VCE
4.0
80mA
60mA
3.5
50mA
40mA
3.0
30mA
2.5
20mA
2.0
15mA
10mA
1.5
5mA
1.0
0.5
0
IB=0mA
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V IT09552
4.0
VCE=2V
3.5
IC -- VBE
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base-to-Emitter Voltage, VBE -- V IT08356
No.8118-2/4