2SC5960 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Switching Regulator Applications

2SC5960
Continued from preceding page.
Parameter
Symbol
Conditions
DC Current Gain
hFE1
hFE2
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Gain-Bandwidth Product
hFE3
VCE(sat)
VBE(sat)
fT
Output Capacitance
Cob
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
V(BR)CBO
V(BR)CEO
Emitter-to-Base Breakdown Voltage
Turn-On Time
V(BR)EBO
ton
Storage Time
tstg
Fall Time
tf
* : The hFE1 of the 2SC5960 is classified as follows.
Rank
M
N
hFE
20 to 40
30 to 50
VCE=5V, IC=0.8A
VCE=5V, IC=4A
VCE=5V, IC=1mA
IC=4A, IB=0.8A
IC=4A, IB=0.8A
VCE=10V, IC=0.8A
VCB=10V, f=1MHz
IC=1mA, IE=0
IC=5mA, RBE=∞
IE=1mA, IC=0
IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V
IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V
IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V
min
20*
10
10
Ratings
typ
15
50
500
400
7
max
50*
0.8
1.5
0.5
2.5
0.3
Unit
V
V
MHz
pF
V
V
V
µs
µs
µs
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
INPUT
VR
RB
50Ω
+
100µF
VBE= --5V
OUTPUT
RL
+
470µF
VCC=200V
10
9
700mA
8 _600mA
7
6
5
4
3
IC -- VCE
900mA
800mA
1000mA
500mA
400mA
300mA
200mA
100mA
2
1
0
0
100
7
IB=0
1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT05057
hFE -- IC
VCE=5V
5
Ta=120^°C
3
25°^C
2
--40^°C
10
7
5
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10
Collector Current, IC -- A
IT05151
IC -- VBE(on)
8
VCE=5V
7
6
5
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Base-to-Emitter ON-State Voltage, VBE(on) -- V IT05149
VCE(sat) -- IC
1.0
7
IC / IB=5
5
3
2
25_°C
0.1
Ta= _--40°C
7
5 ^120°C
3
2
0.01
0.01
23
5 7 _0.1 2 3 5 7 _1.0 2 3 5 7 ₁₀
Collector Current, IC -- A
IT05152
No.7610-2/4