2SC5957M Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

2SC5957M
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCE=10V, IC=1.2A
VCB=10V, f=1MHz
IC=6A, IB=1.2A
IC=6A, IB=1.2A
IC=1mA, IE=0A
IC=5mA, RBE=∞
IE=1mA, IC=0A
IC=7A, IB1=1.4A, IB2=--2.8A, RL=28.6Ω, VCC=200V
IC=7A, IB1=1.4A, IB2=--2.8A, RL=28.6Ω, VCC=200V
IC=7A, IB1=1.4A, IB2=--2.8A, RL=28.6Ω, VCC=200V
Ratings
min
typ
15
80
500
400
7
max
0.8
1.5
0.5
2.5
0.3
Unit
MHz
pF
V
V
V
V
V
µs
µs
µs
Package Dimensions
unit : mm
7507-001
10.2
5.1 3.6
4.5
1.3
1.2
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
INPUT
VR
RB
50Ω
+
100µF
VBE= --5V
OUTPUT
RL
+
470µF
VCC=200V
0.8
123
2.55
2.55
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220
IC -- VCE
10
9
900mA
80₇⁰₀^m₀^A_mA
600mA
8
500mA
7
400mA
6
300mA
5
200mA
4
100mA
3
2
1
0
IB=0mA
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT05069
IC -- VBE(on)
8
VCE=5V
7
6
5
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Base-to-Emitter ON-State Voltage, VBE(on) -- V IT05153
No. A0152-2/4