2SC5957 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Switching Regulator Applications

2SC5957
Continued from preceding page.
Parameter
Symbol
Conditions
DC Current Gain
hFE1
hFE2
Gain-Bandwidth Product
Output Capacitance
hFE3
fT
Cob
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitter Saturation Voltage
VBE(sat)
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
V(BR)CBO
V(BR)CEO
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V(BR)EBO
ton
Storage Time
tstg
Fall Time
tf
* : The hFE1 of the 2SC5957 is classified as follows.
Rank
M
N
hFE
20 to 40
30 to 50
VCE=5V, IC=1.2A
VCE=5V, IC=6A
VCE=5V, IC=1mA
VCE=10V, IC=1.2A
VCB=10V, f=1MHz
IC=6A, IB=1.2A
IC=6A, IB=1.2A
IC=1mA, IE=0
IC=5mA, RBE=∞
IE=1mA, IC=0
IC=7A, IB1=1.4A, IB2=--2.8A, RL=28.6Ω, VCC=200V
IC=7A, IB1=1.4A, IB2=--2.8A, RL=28.6Ω, VCC=200V
IC=7A, IB1=1.4A, IB2=--2.8A, RL=28.6Ω, VCC=200V
min
20*
10
10
Ratings
typ
15
80
500
400
7
max
50*
0.8
1.5
0.5
2.5
0.3
Unit
MHz
pF
V
V
V
V
V
µs
µs
µs
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
INPUT
VR
RB
50Ω
+
100µF
VBE= --5V
OUTPUT
RL
+
470µF
VCC=200V
10
9
8
7
6
5
4
3
2
1
0
0
100
7
5
900mA
IC -- VCE
80₇⁰₀^m₀^A_mA
600mA
500mA
400mA
300mA
200mA
100mA
IB=0
1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT05069
hFE -- IC
VCE=5V
Ta=120^°C
3
25^°C
2
--40^°C
10
7
5
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10
Collector Current, IC -- A
IT05155
IC -- VBE(on)
8
VCE=5V
7
6
5
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Base-to-Emitter ON-State Voltage, VBE(on) -- V IT05153
VCE(sat) -- IC
3
2
IC / IB=5
1.0
7
5
3
25^°C
2 25°C
0.1
Ta= _--40°C
7
5
120°C
3
2
0.01
0.01
23
5 7 _0.1 2 3 5 7 _1.0 2 3 5 7 ₁₀
Collector Current, IC -- A
IT05156
No.7613-2/4