2SC5947 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – NPN Triple Diffused Planar Silicon Transistor - Switching Regulator Applications

2SC5947
Continued from preceding page.
Parameter
DC Current Gain
Collectoe-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
Conditions
hFE1
hFE2
hFE3
VCE(sat)
VBE(sat)
fT
Cob
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCE=5V, IC=0.8A
VCE=5V, IC=4A
VCE=5V, IC=1mA
IC=4A, IB=0.8A
IC=4A, IB=0.8A
VCE=10V, IC=0.8A
VCB=10V, f=1MHz
IC=1mA, IE=0
IC=5mA, RBE=∞
IE=1mA, IC=0
IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V
IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V
IC=5A, IB1=1A, IB2=--2A, RL=40Ω, VCC=200V
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
INPUT
VR
RB
OUTPUT
RL
50Ω
+
100µF
VBE= --5V
+
470µF
VCC=200V
min
20
10
10
Ratings
typ
17
80
700
400
8
max
50
0.8
1.5
0.5
2.5
0.25
Unit
V
V
MHz
pF
V
V
V
µs
µs
µs
IC -- VCE
10
8
1000mA ^{900mA 800mA 700mA 600mA}
500mA
6
400mA
300mA
200mA
4
100mA
2
0
0
100
7
IB=0
2
4
6
8
10
Collector-to-Emitter Voltage, VCE -- V IT03053
hFE -- IC
VCE=5V
5
Ta=120^°C
3
25°C
2
--40^°C
10
7
5
3
2
1.0
0.01
23
5 7 _0.1 2 3 5 7 _1.0 2 3
Collector Current, IC -- A
5 7 ₁₀
IT03055
IC -- VBE
8
VCE=5V
7
6
5
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE -- V
VCE(sat) -- IC
1.0
7 ^{IC / IB=5}
IT03054
5
3
2
0.1
7
5 _--40°C
3
25°C
2
Ta=120^°C
0.01
0.01
23
5 7 _0.1 2 3 5 7 _1.0 2 3 5 7 ₁₀
Collector Current, IC -- A
IT03056
No.7787-2/4