2SC5831 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Driver Applications

2SC5831
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Inductive Load
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
hFE
fT
Es / b
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
ton
tstg
tf
VCE=5V, IC=1A
VCE=5V, IC=1A
L=100mH, RBE=100Ω
IC=1A, IB=4mA
IC=1A, IB=4mA
IC=100µA, IE=0
IC=1mA, RBE=∞
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
1000
25
Ratings
typ
4000
180
1.0
55
65
55
65
0.2
3.5
0.5
Unit
max
MHz
mJ
1.5
V
2.0
V
75
V
75
V
µs
µs
µs
Switching Time Test Circuit
PW=50µs, Duty Cycle≤1%
IB1= --IB2=4mA
INPUT
RB
VR
50Ω
+
100µF
VBB= --5V
IC=250A, IB1= --250A, IB2=1A
OUTPUT
TUT
RL
20Ω
+
470µF
VCC=20V
Es / b Test Circuit
VCC=20V, RBE=100Ω
SW
L +VCC
TUT
IB
RBE
10kΩ 300Ω
IC -- VCE
2.0
1500^µA
1000^µA
1.6
1.2
500^µA
450^{µA 400µA 350µA 300µA}
250^µA
0.8
200^µA
150µA
0.4
0
0
3
2
10000
7
5
3
2
1000
7
5
3
2
100
7
5
3
IB=0
1
2
3
4
5
Collector-to-Emitter Voltage, VCE -- V ITR06005
hFE -- IC
VCE=5V
Ta=120^°C
25^°C
--40^°C
5 7 _0.1
2 3 5 7 _1.0
Collector Current, IC -- A
23 5
ITR06007
IC -- VBE
2.4
VCE=5V
2.0
1.6
1.2
0.8
0.4
0
0
1000
7
5
3
2
0.4
0.8
1.2
1.6
2.0
2.4
2.8
Base-to-Emitter Voltage, VBE -- V ITR06006
Cob -- VCB
f=1MHz
100
7
5
3
2
10
0.1
2 3 5 7 _1.0
2 3 5 7 ₁₀
23 5
Collector-to-Base Voltage, VCB -- V ITR06008
No.7261-2/4