2SC5823 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Switching Regulator Applications

2SC5823
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤300µs, duty cycle≤10%
Tc=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
hFE3
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=400V, IE=0
VEB=5V, IC=0
VCE=5V, IC=0.1A
VCE=5V, IC=0.7A
VCE=5V, IC=1mA
VCE=10V, IC=0.1A
VCB=10V, f=1MHz
IC=0.7A, IB=0.14A
IC=0.7A, IB=0.14A
IC=1mA, IE=0
IC=5mA, RBE=∞
IE=1mA, IC=0
IC=1A, IB1=0.2A, IB2=--0.4A,RL=200Ω, VCC=200V
IC=1A, IB1=0.2A, IB2=--0.4A,RL=200Ω, VCC=200V
IC=1A, IB1=0.2A, IB2=--0.4A,RL=200Ω, VCC=200V
Ratings
700
400
8
1.5
3
0.7
1.0
10
150
--55 to +150
Ratings
min
typ
20
10
10
20
10
700
400
8
max
10
10
50
0.8
1.5
0.5
2.5
0.25
Unit
V
V
V
A
A
A
W
W
°C
°C
Unit
µA
µA
MHz
pF
V
V
V
V
V
µs
µs
µs
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
INPUT
VR
RB
50Ω
+
100µF
VBE= --5V
OUTPUT
RL
+
470µF
VCC=200V
IC -- VCE
2.0
1.8
450mA ^400mA
1.6
1.4
1.2
1.0
0.8
350mA
300mA
250mA
200mA
150mA
100mA
50mA
0.6
20mA
0.4
10mA
0.2
0
IB=0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT06213
IC -- VBE
2.0
VCE=5V
1.5
1.0
0.5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Base-to-Emitter Voltag, VBE -- V IT06214
No.7785-2/4