2SC5791 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

2SC5791
Continued from preceding page.
Parameter
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Storage Time
Fall Time
Symbol
hFE1
hFE2
VCE(sat)
VBE(sat)
tstg
tf
Conditions
VCE=5V, IC=1A
VCE=5V, IC=7A
IC=6.3A, IB=1.6A
IC=6.3A, IB=1.6A
IC=5A, IB1=0.8A, IB2=--2.5A
IC=5A, IB1=0.8A, IB2=--2.5A
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
INPUT
VR
50Ω
RB
+
100µF
VBE= --5V
OUTPUT
RL=40Ω
+
470µF
VCC=200V
Ratings
Unit
min
typ
max
10
4
7
3
V
1.5
V
3.0
µs
0.2
µs
IC -- VCE
10
9
2.0A ^{1.8A 1.6A}
8
1.4A
1.2A
7
1.0A
6
0.8A
0.6A
5
0.4A
4
3
0.2A
0.1A
2
1
0
0
100
7
IB=0
1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT03543
hFE -- IC
VCE=5V
5 _Ta=120°C
3
25°C
2
--40°^C
10
7
5
3
2
1.0
0.1
23
5 7 _1.0
23
Collector Current, IC -- A
5 7 ₁₀
IT03545
10
VCE=5V
9
IC -- VBE
8
7
6
5
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE -- V
VCE(sat) -- IC
10
7 ^{IC / IB=5}
5
IT03544
3
2
1.0
7
5
3
2 _Ta=25°C
0.1 --40_°C
7
5 _120°C
3
2
0.01
0.1
2
3
5 7 _1.0
23
Collector Current, IC -- A
5 7 ₁₀
IT03546
No.6993-2/4