2SC5607 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – DC / DC Converter Applications

2SC5607
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=10V, IE=0
VEB=4V, IC=0
VCE=2V, IC=500mA
VCE=2V, IC=3A
VCE=2V, IC=500mA
VCB=10V, f=1MHz
IC=1.5A, IB=30mA
IC=3A, IB=60mA
IC=1.5A, IB=30mA
IC=10µA, IE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min
typ
600
200
380
23
100
180
0.85
15
10
7
30
210
11
max
0.1
0.1
150
270
1.2
Unit
µA
µA
MHz
pF
mV
mV
V
V
V
V
ns
ns
ns
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
VR
50Ω
IB1
IB2
RB
+
220µF
OUTPUT
RL
+
470µF
VBE= --5V
VCC=5V
20IB1= --20IB2= IC=1.5A
IC -- VCE
5
25mA 20mA 15mA
10mA
4
5mA
3
4mA
3mA
2
2mA
1mA
1
0
0
0.2
0.4
0.6
0.8
Collector-to-Emitter Voltage, VCE -- V
IC -- VBE
6.0
5.5 ^VCE=2V
IB=0
1.0
IT01588
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V IT01590
IC -- VCE
5
15mA
10mA
4
3
8mA
6mA
4mA
2mA
2
1mA
1
0
0
10000
7
5
3
2
IB=0
1
2
3
4
5
Collector-to-Emitter Voltage, VCE -- V IT01589
hFE -- IC
VCE=2V
Ta=75°C
1000
7
5
3
2
--25°C 25°C
100
7
5
3
2
10
0.01
23
5 7 _0.1 2 3 5 7 _1.0 2 3 5 7 ₁₀
Collector Current, IC -- A
IT01591
No.6403-2/4