2SC5551AF-TD-E Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – High-Frequency Medium-Output Amplifier Applications

2SC5551A
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
hFE1
hFE2
fT
Cob
Cre
VCE(sat)
VBE(sat)
Conditions
VCE=5V, IC=50mA
VCE=5V, IC=300mA
VCE=5V, IC=50mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
IC=50mA, IB=5mA
IC=50mA, IB=5mA
* : The 2SC5551A is classified by 50mA hFE as follows :
Marking
EB E
EB F
Rank
E
F
hFE
90 to 180
135 to 270
Package Dimensions
unit : mm (typ)
7007B-004
min
90
20
Ratings
typ
3.5
2.9
1.5
0.07
0.8
max
270
4.0
0.3
1.2
Unit
GHz
pF
pF
V
V
100
IC -- VCE
500^μA
450^μA
80
400μA
350μA
60
300μ^A
250μ^A
40
200μA
150μA
20
100μA
50μA
0
IB=0μA
0
4
8
12
16
20
Collector-to-Emitter Voltage, VCE -- V IT01066
hFE -- IC
1000
7
VCE=5V
5
3
2
100
7
5
3
2
10
1.0
2 3 5 7 ₁₀ 2 3 5 7 ₁₀₀ 2 3 5 7 ₁₀₀₀
Collector Current, IC -- mA
IT01067
No. A1118-2/4