2SA2204 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
2SA2204
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=--1A, IB=--100mA
IC=--1A, IB=--100mA
IC=--10µA, IE=0A
IC=--100µA, RBE=0Ω
IC=--1mA, RBE=∞
IE=--10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
Unit
min
typ
max
--100
--200 mV
--0.85
--1.2
V
--80
V
--80
V
--80
V
--7
V
40
ns
500
ns
28
ns
Package Dimensions
unit : mm (typ)
7518-003
Package Dimensions
unit : mm (typ)
7003-003
6.5
2.3
5.0
0.5
4
6.5
2.3
5.0
0.5
4
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
OUTPUT
INPUT
VR
50Ω
1kΩ
+
220µF
RL
+
470µF
VBE=5V
VCC= --40V
IC= --10IB1=10IB2= --0.5A
No. A0543-2/4