2SA2023 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – 60V / 5A High-Speed Switching Applications

Continued on preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Switching Time Test Circuit
2SA2023/2SC5611
Symbol
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=(–)1mA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)1mA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
PW=20µs
D.C.≤1%
INPUT
VR
50Ω
IB1
IB2
RB
+
OUTPUT
RL=10Ω
+
100µF
470µF
VBE=--5V
VCC=20V
20IB1=--20IB2=IC=2A
(For PNP, the polarity is reversed.)
Ratings
Unit
min typ max
(–)80
V
(–)60
V
(–)5
V
0.1
µs
0.5
µs
0.1
µs
--6
IC -- VBE
2SA2023
VCE=--2V
--5
--4
--3
--2
--1
0
0
1000
7
5
3
2
100
7
5
3
2
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE – V _IT00512
hFE -- IC
2SA2023
VCE=--2V
Ta=120°C
25°C
--40°C
10
--0.01
23
5 7 _--0.1 2 3 5 7 _--1.0 2 3
Collector Current, IC – A
5 7 _--10
IT00514
6
IC -- VBE
2SC5611
VCE=2V
5
4
3
2
1
0
0
1000
7
5
3
2
100
7
5
3
2
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE – V _IT00513
hFE -- IC
2SC5611
VCE=2V
Ta=120°C
25°C
--40°C
10
0.01
23
5 7 _0.1 2 3 5 7 _1.0 2 3 5 7 ₁₀
Collector Current, IC – A
IT00515
No.6336–2/4