2SA2016 Datasheet, PDF (2/5 Pages) Sanyo Semicon Device – DC/DC Converter Applications

2SA2016/2SC5569
Continued on preceding page.
Parameter
Symbol
Conditions
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
VCE(sat)
IC=(–)3.5A, IB=(–)175mA
IC=(–)2A, IB=(–)40mA
VBE(sat) IC=(–)2A, IB=(–)40mA
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO
V(BR)EBO
ton
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
See specified Test Circuit
tstg
See specified Test Circuit
tf
See specified Test Circuit
Switching Time Test Circuit
PW=20µs
IB1
D.C.≤1%
IB2
INPUT
OUTPUT
RB
VR
50Ω
+
RL
+
100µF 470µF
VBE=--5V
VCC=25V
20IB1= --20IB2= IC=2.5A
(For PNP, the polarity is reversed.)
Ratings
Unit
min
typ
max
(–230) (–390) mV
160 240 mV
(–240) (–400) mV
110 170 mV
(–)0.83 (–)1.2 V
(–50)
V
80
V
(–)50
V
(–)6
V
(40)30
ns
(225)
ns
420
ns
25
ns
--7
2SA2016
--6
--5
IC -- VCE
--90mA
--80mA
--70mA
--60mA
--4
--100mA
--3
--50mA
--40mA
--30mA
--20mA
--2
--10mA
--1
0
IB=0
0
--0.4
--0.8
--1.2
--1.6
--2.0
Collector-to-Emitter Voltage, VCE – V _IT00206
--8
IC -- VBE
2SA2016
--7
VCE=--2V
--6
--5
--4
--3
--2
--1
0
0
--0.2 --0.4 --0.6 --0.8
--1.0 --1.2 --1.4
Base-to-Emitter Voltage, VBE – V _IT00208
7
90mA
6
5
4
3
2
IC -- VCE
80mA
70mA
60mA
50mA
40mA
30mA
20mA
10mA
1
0 ^2SC5569
IB=0
0
0.4
0.8
1.2
1.6
2.0
Collector-to-Emitter Voltage, VCE – V _IT00207
8
IC -- VBE
2SC5569
7
VCE=2V
6
5
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Base-to-Emitter Voltage, VBE – V _IT00209
No.6309–2/5