15C01SP Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Low-Frequency General-Purpose Amplifier Applications

15C01SP
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=200mA, IB=10mA
IC=200mA, IB=10mA
IC=10µA, IE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
IB2
INPUT
VR
RB
50Ω
+
220µF
VBE= --5V
IC=20IB1= --20IB2=500mA
OUTPUT
RL
+
470µF
VCC=5V
Ratings
Unit
min
typ
max
150
300 mV
0.9
1.2
V
20
V
15
V
5
V
30
ns
77
ns
40
ns
200
180
160
140
120
100
80
60
40
20
0
0
1000
7
5
3
2
IC -- VCE
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
IB=0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Collector-to-Emitter Voltage, VCE -- V IT05490
hFE -- IC
VCE=2V
25°C
Ta=75_°C
--25_°C
100
7
5
3
1.0 ^{2 3 5 7} 10 ^{2 3 5 7} 100 ^{2 3 5 7} 1000
Collector Current, IC -- mA
IT05492
800
700
600
500
400
300
200
100
0
0
1000
7
5
3
2
IC -- VBE
VCE=2V
0.2
0.4
0.6
0.8
1.0
1.2
Base-to-Emitter Voltage, VBE -- V IT05491
VCE(sat) -- IC
IC / IB=20
100
7
5
Ta=75^{°C--25°C}
3
25^°C
2
10
1.0
23
5 7 ₁₀ 2 3 5 7 ₁₀₀ 2 3 5 7 ₁₀₀₀
Collector Current, IC -- mA
IT05493
No.7507-2/4