LE25FU106B Datasheet, PDF (17/21 Pages) Sanyo Semicon Device – CMOS IC 1M-bit (128K×8) Serial Flash Memory

AC Characteristics
Parameter
Clock frequency
SCK logic high level pulse width
SCK logic low level pulse width
Input signal rising/falling time
CS setup time
SCK setup time
Data setup time
Data hold time
CS hold time
SCK hold time
CS wait pulse width
Output high impedance time from CS
Output data time from SCK
Output data hold time
HOLD setup time
HOLD hold time
Output low impedance time from HOLD
Output high impedance time from HOLD
WP setup time
WP hold time
Write status register time
Page programming cycle time
Small sector erase cycle time
Sector erase cycle time
Chip erase cycle time
Power-down time
Power-down recovery time
Output low impedance time from SCK
LE25FU106B
Symbol
fCLK
tCLHI
tCLLO
tRF
tCSS
tCLS
tDS
tDH
tCSH
tCLH
tCPH
tCHZ
tV
tHO
tHS
tHH
tHLZ
tHHZ
tWPS
tWPH
tSRW
tPP
tSSE
tSE
tCHE
tDP
tPRB
tCLZ
Ratings
min
typ
16
16
10
10
5
5
10
10
25
10
1
7
3
20
20
5
2.0
0.04
0.06
0.14
0
max
30
20
15
15
9
9
15
2.5
0.15
0.2
1.4
3
3
unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
s
s
s
μs
μs
ns
AC Test Conditions
Input pulse level··············· 0V, 2.5V
Input rising/falling time···· 5ns
Input timing level············· 0.3VDD, 0.7VDD
Output timing level ·········· 1/2×VDD
Output load ······················ 30pF
Note: As the test conditions for "typ," the measurements are conducted using 2.5V for VDD at room temperature.
No.A1140-17/21