WPB4002 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1769
WPB4002
SANYO Semiconductors
DATA SHEET
WPB4002
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{Reverse recovery time trr=115ns (typ)}
• _{Input capacitance Ciss=2200pF (typ)}
• _{ON-resistance RDS(on)=0.28Ω (typ)}
• _{10V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Source-to-Drain Diode Forward Current (DC)
Source-to-Drain Diode Forward Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
ISD
ISDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=99V, L=1mH, IAV=17A (Fig.1)
*2 L≤1mH, single pulse
Conditions
PW≤10μs, duty cycle≤1%
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
600
V
±30
V
23
A
80
A
23
A
80
A
2.5
W
220
W
150
°C
--55 to +150
°C
172 mJ
17
A
Package Dimensions
unit : mm (typ)
7503-004
15.6
14.0
3.2
4.8
2.0
Product & Package Information
• Package
: TO-3PB
• JEITA, JEDEC
: SC-65, TO-247, SOT199
• Minimum Packing Quantity : 100 pcs. / tray
Marking
1.6
2.0
1.0
1 23
0.6
5.45
5.45
0.6
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3PB
PB4002
LOT No.
http://semicon.sanyo.com/en/network
60910QB TK IM TC-00002373 No. A1769-1/5