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VS002E4 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – SSPD Series Silicon Bidirectional Diode Noise clamp for signal line (For low voltage, USB1.1)
Ordering number : ENA1251
VS002E4
SANYO Semiconductors
DATA SHEET
VS002E4
SSPD Series Silicon Bidirectional Diode
Noise clamp for signal line
(For low voltage, USB1.1)
Features
• Low voltage (4.0V) , overshoot clamp.
• USB1.1 signal line overshoot/undershoot clamp.
• Usable in signal line due to small capacitance.
• Allows high-density mounting and compact designing.
• Halogen free cpmpliance (UL94 HB).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
P
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Marking : EB
Symbol
VR
VF
IR
C
Conditions
IR=1μA
IR=1mA
IF=1mA
VR=2.5V
VR=0V, f=1MHz
Ratings
Unit
100 mW
150
°C
--55 to +150
°C
Ratings
Unit
min
typ
max
3.4
V
4.0
V
0.35
V
1.0 μA
16
pF
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
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90308SP TI IM TC-00001600 No. A1251-1/3