VEC2607 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

Ordering number : ENN8359
VEC2607
VEC2607
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
• The best suited for inverter applications.
• The VEC2607 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,
thereby enabling high-density mounting.
• Low voltage drive.
• Mounting height 0.75mm.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm²!0.8mm)1unit
Mounted on a ceramic board (900mm²!0.8mm)
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : CA
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2.5A
ID=2A, VGS=4V
ID=1A, VGS=2.5V
ID=0.3A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
N-channel
P-channel
Unit
20
--12
V
±10
±8
V
4.5
--4
A
18
--16
A
0.9
W
1.0
W
150
°C
--55 to +150
°C
Ratings
Unit
min
typ
max
20
V
1 µA
±10 µA
0.5
1.3
V
4.5
7.5
S
32
42 mΩ
40
57 mΩ
55
80 mΩ
570
pF
110
pF
80
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005PE MS IM TB-00001478 No.8359-1/6