TS7990 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ordering number :EN5960
NPN Triple Diffused Planar Silicon Transistor
TS7990
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
• High speed.
• High breakdown voltage (VCBO=1600V).
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
Package Dimensions
unit:mm
2039D-TO3PML
[TS7990]
16.0
ø3.4
5.6
3.1
2.8
2.0
2.0
1.0
0.6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Colletctor-to-Base Voltage
Colletctor-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚ C
Electrical Characteristics at Ta = 25˚C
123
5.45
5.45
1:Base
2:Collector
3:Emitter
SANYO:TO-3PML
Conditions
Ratings
Unit
1600 V
800 V
6V
15 A
35 A
3.0 W
75 W
150 ˚C
–55 to +150 ˚C
Parameter
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain
C-E Saturation Voltage
B-E Saturation Voltage
Storage Time
Fall Time
Symbol
Conditions
ICES
VCEO_(SUS)
IEBO
ICBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
tstg
tf
VCE=1600V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
VCB=800V, IE=0
VCE=5V, IC=1.0A
VCE=5V, IC=11A
IC=11A, IB=2.75A
IC=11A, IB=2.75A
IC=9A, IB1=1.5A, IB2=–3.75A
IC=9A, IB1=1.5A, IB2=–3.75A
Ratings
Unit
min
typ
max
1.0 mA
800
V
1.0 mA
10 µA
15
30
4
7
5V
1.5 V
3.0 µs
0.2 µs
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42498TS (KOTO) TA-1621 No.5960-1/3