TS788 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – N- channel Junction FET Electret Condenser Microphone

TS788
N- channel Junction FET
Electret Condenser Microphone
Features
• Especially suited for use in electret condenser microphone.
• TS788 is possible to make applied sets smaller and Slimmer.
• Excellent voltage characteristics.
• Excellent transient characteristics.
• Adoption of FBET process.
Absolute Maximum Ratings / Ta=25°C
Gate to Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
VGDO
IG
ID
PD
Tj
Tstg
TENTATIVE
--20
10
1
100
150
--55to+150
unit
V
mA
mA
mW
°C
°C
Electrical Characteristics / Ta=25°C
G-D Breakdown Voltage
V( BR)GDO IG =--100µA
Cutoff Voltage
VGS(off) VDS=5V, ID=1µA
Drain Current
IDSS
VDS=5V, VGS=0
Forward Transfer Admittance
| Yfs |
VDS=5V, VGS=0, f=1kHz
Input Capacitance
Ciss
VDS=5V, VGS=0, f=1MHz
Reverce Transfer Capacitance
Crss
VDS=5V, VGS=0, f=1MHz
g : The TS788 is classified by IDSS as follows : (unit : µA)
min typ max unit
--20
V
--0.2 --0.6 --1.5
V
140g
500g
µA
0.4 1.2
mS
4.1
pF
0.88
pF
Marking
IDSS
E4
140 to 240
E5
210 to 350
E6
320 to 500
[Ta=25°C, VCC=4.5V, RL=1kΩ, CIN=15pF, See specified Test Circuit.]
min typ max unit
Voltage Gain
Reduced Voltage Characteristics
Frequency Characteristics
Input Resistance
Output Resistance
Total Harmonic Distortion
Output Noise Voltage
GV
∆GVV
∆GVf
ZIN
Zo
THD
VNO
VIN=10mV, f=1kHz
VIN=10mV, f=1kHz
VCC=4.5→1.5V
f=1kHz to 110Hz
f=1kHz
f=1kHz
VIN=30mV, f=1kHz
VIN=0 , A curve
--3.0
dB
--1.2 --3.5
dB
--1.0
dB
25
mΩ
700
Ω
1.0
%
--110
dB
Test Circuit
Voltage Gain
Frequency Characteristics
Distortion
Reduced Voltage Characteristics
1kΩ
15pF
+33uF
Vcc=4.5V
Vcc=1.5V
Package Dimensions
SMCP (unit : mm)
0.3
3
12
0.2
1.0
1.6
0.1
0 to 0.1
to
OSC
VTVM ^{V THD} _{B A}
1kΩ Output Impedance
1 : Drain
2 : Source
3 : Gate
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
971128TM2fXHD