TIG002SS Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Light-Controlling Strobe Applications

Ordering number : ENN7167
Features
• _{Low-saturation voltage.}
• _{4V drive.}
• Enhansment type.
TIG002SS
N-Channel IGBT
TIG002SS
Light-Controlling Strobe Applications
Package Dimensions
unit : mm
2203
[TIG002SS]
8
5
1
4
5.0
1 : Emitter
2 : Emitter
3 : Emitter
0.2 ^{4 : Gate}
5 : Collector
6 : Collector
7 : Collector
8 : Collector
Specifications
Absolute Maximum Ratings at Ta=25°C
0.595 1.27 0.43
SANYO : SOP8
Parameter
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
Collector Current (Pulse)
Channel Temperature
Storage Temperature
Symbol
VCES
VGES
VGES
ICP
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤500µs, duty cycle≤0.5%
Ratings
Unit
400
V
±6
V
±8
V
150
A
150
°C
--40 to +150
°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector-to-Emitter Breakdown Voltage
V(BR)CES IC=5mA, VGE=0
400
V
Collector-to-Emitter Cutoff Current
ICES
VCE=320V, VGE=0
10
µA
Gate-to-Emitter Leakage Current
IGES
VGE=±6V, VCE=0
±100
nA
Gate-to-Emitter Cutoff Voltage
VGE(off) VCE=10V, IC=1mA
0.5
1.2
V
Collector-to-Emitter Saturation Voltage
VCE(sat)1
VCE(sat)2
IC=150A, VGE=4V
IC=60A, VGE=2.5V
4.2
5.5
V
2.4
3.4
V
Input Capacitance
Cies
VCE=10V, f=1MHz
3300
pF
Output Capacitance
Coes
VCE=10V, f=1MHz
75
pF
Reverse Transfer Capacitance
Cres
VCE=10V, f=1MHz
40
pF
(Note) Handling the TIG002SS requires sufficient care to be taken because it has no protection diode between gate and emitter.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41002 TS IM TA-3515 No.7167-1/3