TF410 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – N-Channel Silicon Junction FET Impedance Converter, Infrared Sensor Applications

Ordering number : ENA2007
TF410
SANYO Semiconductors
DATA SHEET
TF410
N-Channel Silicon Junction FET
Impedance Converter,
Infrared Sensor Applications
Applications
• _{Impedance conversion, infrared sensor applications}
Features
• _{Ultrasmall package facilities miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm)}
• _{Small IGSS : max --500pA (VGSS= --20V, VDS=0V)}
• _{Small Ciss : typ. 0.7pF (VDS= 10V, VGS=0V, f=1MHz)}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGDS
IG
ID
PD
Tj
Tstg
Conditions
Ratings
Unit
40
V
--40
V
10 mA
1 mA
30 mW
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7055-003
0.6
0.2
3
0.11
0 to 0.02
Product & Package Information
• Package
: USFP
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 10,000 pcs./reel
Packing Type: TL
Marking
3
1
0.175
2
0.15
12
1 : Source
2 : Drain
3 : Gate
3
SANYO : USFP
TL
Electrical Connection
3
1 : Source
2 : Drain
3 : Gate
1
2 Top view
B
12
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22912GB TKIM TC-00002703 No. A2007-1/3