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TF408 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – N-Channel Silicon Junction FET Low-Frequency General-Purpose Amplifi er, Impedance Converter Applications | |||
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Ordering number : ENA2008
TF408
SANYO Semiconductors
DATA SHEET
TF408
N-Channel Silicon Junction FET
Low-Frequency General-Purpose Ampliï¬er,
Impedance Converter Applications
Applications
⢠Low-Frequency general-purpose ampliï¬er, impedance conversion, infrared sensor applications
Features
⢠Ultrasmall package facilitates miniaturization in end products : 1.0mmÃ0.6mmÃ0.27mm (max 0.3mm)
⢠Small IGSS : max --1.0nA (VGS= --20V, VDS=0V)
⢠Small Ciss : typ 4pF (VDS= 10V, VGS=0V, f=1MHz)
⢠Halogen free compliance
Speciï¬cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Tstg
Conditions
Ratings
Unit
30
V
--30
V
10 mA
10 mA
30 mW
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7055-003
0.6
0.2
3
0.11
0 to 0.02
Product & Package Information
⢠Package
: USFP
⢠JEITA, JEDEC
:-
⢠Minimum Packing Quantity : 10,000 pcs./reel
Packing Type: TL
Marking
3
1
0.175
2
0.15
12
1 : Source
2 : Drain
3 : Gate
3
SANYO : USFP
TL
Electrical Connection
3
1 : Source
2 : Drain
3 : Gate
1
2 Top view
A
12
http://semicon.sanyo.com/en/network
22912GB TKIM TC-00002704 No. A2008-1/4
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