TF246 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – N-channel Silicon Junction FET Electret Condenser Microphone Applications

Ordering number : ENA0729
TF246
SANYO Semiconductors
DATA SHEET
TF246 ^{N-channel Silicon Junction FET}
Electret Condenser Microphone Applications
Features
• Ultrasmall package facilitates miniaturization in end products.
• Especially suited for use in electret condenser microphone for audio equipments and telephones.
• Excellent voltage characteristics.
• Excellent transient characteristics.
• Adoption of FBET process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VGDO
IG
ID
PD
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Zero-Gate Voltage Drain Current
Making : F
Symbol
Conditions
V(BR)GDO
VGS(off)
IDSS
IG=--100µA
VDS=5V, ID=1µA
VDS=5V, VGS=0V
* : The TF246 is classified by IDSS as follows : (unit : µA)
Rank
4
5
IDSS
140 to 240
210 to 350
Ratings
Unit
--20
V
10 mA
1 mA
30 mW
150
°C
--55 to +150
°C
min
--20
--0.2
140*
Ratings
typ
--0.6
Unit
max
V
--1.0
V
350*
µA
Continued on next page.
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the performance, characteristics, and functions of the described products in the independent state, and are not
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customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
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40407GB TI IM TC-00000316 No. A0729-1/4