TF202FC Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – N-channel Silicon Juncton FET Electret Condenser Microphone Applications

Ordering number : ENA1343
TF202FC
SANYO Semiconductors
DATA SHEET
TF202FC
N-channel Silicon Juncton FET
Electret Condenser Microphone
Applications
Features
• _{Ultrasmall package facilitates miniaturization in end products.}
• _{Especially suited for use in electret condenser microphone for audio equipments and telephones.}
• _{Excellent voltage characteristics.}
• _{Excellent transient characteristics.}
• _{Adoption of FBET process.}
• _{Halogen free compliance.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VGDO
IG
ID
PD
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Marking : E
Symbol
Conditions
V(BR)GDO
VGS(off)
IG=--100μA
VDS=5V, ID=1μA
Ratings
Unit
--20
V
10 mA
1 mA
100 mW
150
°C
--55 to +150
°C
min
--20
--0.2
Ratings
Unit
typ
max
V
--0.6
--1.0
V
Continued on next page.
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the performance, characteristics, and functions of the described products in the independent state, and are
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customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
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O2208GB MS IM TC-00001090 No.A1343-1/3