SVD102 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – X Band VCO, PLO

Ordering number : EN5767
Features
• High Q.
• High capacitance ratio.
Hyperabrupt Junction Type GaAs Varactor Diode
SVD102
X Band VCO, PLO
Package Dimensions
unit: mm
1274
[SVD102]
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Peak Reverse Voltage
V_rm
Average Rectified Current
I_fm
Allowable Power Dissipation
P_D
Junction Temperature
Tj
Storage Temperature
Tstg
Mounting Temperature
Tm
Conditions
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Forward Voltage
Reverse Voltage
Reverse Current
Interterminal Capacitance
Capacitance Ratio
V_F
V_R
I_R
C_t0V
C_j0V / C_j25V
I_F=10mA
I_R=10µA
V_R=25V
V_R=0V, f=1MHz
V_R=0V, 25V, f=1MHz
1 : Cathode
2 : Anode
Ratings
Unit
30
V
50 mA
500 mW
150
°C
–65 to +150
°C
230/10s
°C
Ratings
Unit
min typ max
1.4 V
–27
V
100 nA
5
7
pF
5
8
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
90597GI (KOTO) No.5767-1/2