SVC354 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Applications

Ordering number :EN4274A
SVC354
Diffused Junction Type Sillicon Diode
Composite Varactor Diode for AM Receiver
Low-Voltage Electronic Tuning Applications
Features
· Excellent matching characteristics because of
composite type.
· Manufacturing processes reducible and automatic
mounting supported.
· High capacitance ratio and high quality factor.
· Capacitance separated in RF and OSC.
· Tape reel packaging.
· Surface mount type.
Package Dimensions
unit:mm
1267
[SVC354]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Reverse Voltage
Junction Temperature
Storage Temperature
Symbol
VR
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Breakdown Voltage
Reverse Current (One diode)
Interterminal Capacitance (Average)
Quality Factor
Capacitance Ratio
Matching Tolerance
V(BR)R
IR
C1V
C6V
C8V
Q
CR
∆Cm*2
IR=10µA
VR=9V
VR=1V, f=1MHz*1
VR=6V, f=1MHz
VR=8V, f=1MHz
VR=1V, f=1MHz
C1V/C8V, f=1MHz
VR=1V to 8V, f=1MHz
Note)*1:1MHz signal:20mVrms
Note)*2:∆_Cm= (CDn–CD3) / CD3×100
Note)*:The SVC354 is classified by C1V as follows:
Electrical Connection
Rank
R
S
T
C1V(pF)
460.0 to 491.0
482.0 to 515.0
505.0 to 540.0
1:Anode1
2:Cathode1
3:Anode2
4:Anode3
5:Cathode2
6:No Contact
SANYO:MFP6
Ratings
Unit
16 V
125 ˚C
–55 to +125 ˚C
Ratings
Unit
min typ max
16
V
100 nA
460.0*
540.0* pF
52.0
pF
21.0
27.0 pF
200
17.5
24.5
±2.5 %
A:Anode
C:Cathode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/92794MO 8-8098/3202HK No.4274-1/3