SVC352 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Composite Varactor Diode, for AM Low-Voltage Electronic Tuning

Ordering number :EN3757B
SVC352
Sillicon Diffused Junction Type
Composite Varactor Diode,
for AM Low-Voltage Electronic Tuning
Features
· Excellent matching characteristics because of
composite type.
· The number of manufactuaring processes can be
reduced and automatic mounting is possible because
of composite type.
· High capacitance ratio and high quality factor.
Package Dimensions
unit:mm
1194A
[SVC352]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
1:Anode1
2:Cathode
3:Anode2
4:Cathode
5:Anode3
SANYO:SIP5
Parameter
Reverse Voltage
Junction Temperature
Storage Temperature
Symbol
VR
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Breakdown Voltage
Reverse Current (One diode)
Interterminal Capacitance (Average)
Quality Factor
Capacitance Ratio
Matching Tolerance
V(BR)R
IR
C1V
C6V
C8V
Q
CR
∆Cm*2
IR=10µA
VR=9V
VR=1V, f=1MHz*1
VR=6V, f=1MHz
VR=8V, f=1MHz
VR=1V, f=1MHz
C1.0V/C8.0V, f=1MHz
VR=1V to 8V, f=1MHz
Note)*1:1MHz signal:20mVrms
Note)*2:∆Cm= (CDn–CD3) / CD3×100
Note)*:The SVC352 is classified by C1V as follows:
Electrical Connection
Ratings
Unit
16 V
125 ˚C
–55 to +125 ˚C
Ratings
Unit
min typ max
16
V
100 nA
460.0*
540.0* pF
52.0
pF
21.0
27.0 pF
200
17.5
24.5
±2.5 %
Rank
R
S
T
C1V
460.0 to 491.0pF
482.0 to 515.0pF
505.0 to 540.0pF
Rank Marking
Green
Black
Yellow
1:Anode1
2:Cathode
3:Anode2
4:Cathode
5:Anode3
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/40594YH (KOTO)/BX-0887, X-7227 No.3757-1/3