SVC351 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Composite Varactor Diode for AM Receiver Electronic Tuning Use

Ordering number:EN2819D
SVC351
Diffused Junction Type Silicon Diode
Composite Varactor Diode for
AM Receiver Electronic Tuning Use
Features
· Execellent matching characteristics because of
composite type.
· The number of manufacturing processes can be
reduced and automatic mounting is possible because
of composite type.
· High capacitance ratio and high quality factor.
Package Dimensions
unit:mm
1194B
[SVC351]
Electrical Connection
1:Anode1
2:Cathode
3:Anode2
4:Cathode
5:Anode3
SANYO:SIP5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Reverse Voltage
Junction Temperature
Storage Temperature
Symbol
VR
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Breakdown Voltage
Reverse Current (One diode)
Interterminal Capacitance (Average)
Quality Factor
Capacitance Ratio
Matching Tolerance
V(BR)R
IR
C1V
C6V
C8V
Q
CR
∆Cm*2
*1 : 1MHz signal : 20 Vrms
*2 : ∆Cm=(C_Dn-C_D3)/C_D3×100
* : The SVC 351 is classified by C_1V as follows:
IR=10µA
VR=9V
VR=1V, f=1MHz*1
VR=6V, f=1MHz
VR=8V, f=1MHz
VR=1V, f=1MHz
C1V/C8V, f=1MHz
VR=1 to 8V, f=1MHz
Rank
K
L
M
C1V(pF)
428.0 to 456.5
447.5 to 478.0
468.5 to 500.0
1:Anode1
2:Cathode
3:Anode2
4:Cathode
5:Anode3
SANYO:SIP5
Ratings
Unit
16 V
125 ˚C
–55 to +125 ˚C
Ratings
Unit
min
typ
max
16
V
100 nA
428.0*
500.0* pF
48.0
65.0 pF
20.5
27.0 pF
200
16.5
23.5
±2.5 %
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/2179MO, TS No.2819-1/3